Indlela yokulungiselela i-polysilicon.

1. Iyalayisha

Beka i-quartz crucible egqunyiweyo kwitafile yokutshintshiselana kobushushu, yongeza i-silicon ekrwada, emva koko ufake izixhobo zokufudumeza, izixhobo zokufudumeza kunye nesigqubuthelo somlilo, ukhuphe isithando somlilo ukunciphisa uxinzelelo kwisithando somlilo kwi-0.05-0.1mbar kwaye ugcine i-vacuum. Yazisa i-argon njengegesi yokukhusela ukugcina uxinzelelo kwisithando somlilo ngokusisiseko malunga ne-400-600mbar.

2. Ukufudumeza

Sebenzisa isifudumezi segraphite ukufudumeza umzimba weziko, kuqala ukhuphe ukufuma okufakwe kumphezulu wegraphite, umaleko wokugquma, izinto ezikrwada zesilicon, njl.℃. Le nkqubo ithatha i-4-5h.

3. Ukunyibilika

Yazisa i-argon njengegesi yokukhusela ukugcina uxinzelelo kwisithando somlilo ngokusisiseko malunga ne-400-600mbar. Kancinci ukwandisa amandla okufudumeza ukulungelelanisa ubushushu kwi-crucible malunga ne-1500℃, kwaye i-silicon ekrwada iqala ukunyibilika. Gcina malunga ne-1500℃ngexesha lokunyibilika de ukunyibilika kugqitywe. Le nkqubo ithatha malunga neeyure ezingama-20-22.

4. Ukukhula kwekristale

Emva kokuba imathiriyeli ye-silicon inyibilikiswa, amandla okufudumeza ayancitshiswa ukwenza ubushushu bokwehla kwe-crucible ukuya malunga ne-1420-1440.℃, eyona ndawo yokunyibilika kwesilicon. Emva koko i-quartz crucible ihlehla ngokuthe ngcembe, okanye isixhobo sokugquma siyenyuka ngokuthe ngcembe, ukuze i-quartz crucible ishiye kancinci indawo yokufudumeza kwaye yenze utshintshiselwano lobushushu kunye nendawo eyingqongileyo; ngelo xesha, amanzi adluliswa kwipleyiti yokupholisa ukunciphisa ubushushu bokunyibilika ukusuka ezantsi, kwaye i-crystalline silicon yenziwa kuqala ezantsi. Ngexesha lenkqubo yokukhula, i-slid-liquid interface ihlala ihlala ihambelana ne-horizontal plane de ukukhula kwekristale kugqitywe. Le nkqubo ithatha malunga neeyure ezingama-20-22.

5. Ukucoca

Emva kokuba ukukhula kwekristale kugqityiwe, ngenxa yeqondo lokushisa elikhulu phakathi kwezantsi kunye nomphezulu wekristale, uxinzelelo lwe-thermal lunokubakho kwi-ingot, ekulula ukuyiqhekeza kwakhona ngexesha lokufudumeza kwe-silicon wafer kunye nokulungiswa kwebhetri. . Ngoko ke, emva kokuba ukukhula kwekristale kugqityiwe, i-silicon ingot igcinwa kufuphi nendawo yokunyibilika kweeyure ze-2-4 ukwenza ukushisa kwe-silicon ingot iyunifomu kunye nokunciphisa uxinzelelo lwe-thermal.

6. Ukupholisa

Emva kokuba i-ingot ye-silicon ifakwe eziko, cima amandla okufudumeza, phakamisa isixhobo sokugquma ubushushu okanye unciphise ngokupheleleyo i-silicon ingot, kwaye ungenise ukuhamba okukhulu kwegesi ye-argon eziko ukunciphisa kancinci ubushushu be-silicon ingot kufutshane. ubushushu begumbi; kwangaxeshanye, uxinzelelo lwerhasi esithandweni lukhula ngokuthe ngcembe de lufikelele kuxinzelelo lwe-atmospheric. Le nkqubo ithatha malunga neeyure ezili-10.